Integrated circuit including standard cell

ABSTRACT

A standard cell of an IC includes a cell area including a transistor configured to determine a function of the standard cell; a first dummy area and a second dummy area respectively adjacent to two sides of the cell area in a first direction; and an active area extending in the first direction across the cell area, the first dummy area, and the second dummy area. The active area includes a first active area and a second active area spaced apart from each other in a second direction perpendicular to the first direction and extend parallel to each other in the first direction. At least one of the first active area and the second active area provided in the first dummy area is biased, and at least one of the first active area and the second active area provided in the second dummy area is biased.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a divisional of U.S. application Ser. No. 15/871,206 filed Jan.15, 2018, which claims priority from Korean Patent Application Nos.10-2017-0015987, filed on Feb. 6, 2017 and 10-2017-0141320, filed onOct. 27, 2017, in the Korean Intellectual Property Office. Thedisclosures of the above-named applications are incorporated herein intheir entireties by reference.

BACKGROUND

Apparatuses and methods consistent with example embodiments relate to anintegrated circuit (IC), and more particularly, to an IC including astandard cell including a dummy area.

An IC may be designed based on standard cells. Specifically, standardcells may be arranged based on data defining the IC and routed togenerate a layout of the IC. With the miniaturization of semiconductors,a size of patterns in a standard cell and a size of the standard cellmay be reduced during a manufacturing process. Thus, the influence of aperipheral structure (i.e., a peripheral layout) of the standard cellupon the standard cell may increase. The influence of the peripherallayout may be referred to as a local layout effect (LLE) or a layoutdependent effect (LDE).

SUMMARY

One or more example embodiments provide an integrated circuit (IC)including standard cells including a dummy area. More specifically,there is provided an IC in which a standard cell including a dummy areais located in consideration of a local layout effect (LLE).

According to an aspect of an example embodiment, there is provided an ICincluding a plurality of standard cells. At least one standard cell ofthe plurality of standard cells may include a power rail configured tosupply power to the at least one standard cell, the power rail extendingin a first direction; a cell area including at least one transistorconfigured to determine a function of the at least one standard cell; afirst dummy area and a second dummy area respectively adjacent to twosides of the cell area in the first direction; and an active areaextending in the first direction across the cell area, the first dummyarea, and the second dummy area. A region of the active area, which isincluded in at least one of the first dummy area and the second dummyarea, may be electrically connected to the power rail.

According to an aspect of an example embodiment, there is provided an ICincluding a plurality of standard cells. At least one standard cell ofthe plurality of standard cells may include a cell area including atleast one transistor configured to determine a function of the at leastone standard cell; a first dummy area and a second dummy arearespectively adjacent to two sides of the cell area in a firstdirection; and an active area extending in the first direction acrossthe cell area, the first dummy area, and the second dummy area. Theactive area may include a first active area and a second active area,which are spaced apart from each other in a second directionperpendicular to the first direction and extend parallel to each otherin the first direction. At least one of the first active area and thesecond active area provided in the first dummy area is biased. At leastone of the first active area and the second active area provided in thesecond dummy area may be biased.

According to an aspect of an example embodiment, there is provided an ICincluding a plurality of standard cells. At least one standard cell ofthe plurality of standard cells may include a first power rail and asecond power rail, each power rail extending in a first direction tosupply power to the at least one standard cell, the first power rail andthe second power rail spaced apart from each other in a second directionperpendicular to the first direction; a cell area including at least onetransistor configured to determine a function of the at least onestandard cell; and an active area extending in the first directionacross the cell area. The active area may include a first active areaand a second active area, which are spaced apart from each other in thesecond direction and extend parallel to each other in the firstdirection. The first active area provided in the dummy area may beelectrically connected to the first power rail, and the second activearea provided in the dummy area may be electrically connected to thesecond power rail.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and/or other aspects will be more clearly understood from thefollowing detailed description taken in conjunction with theaccompanying drawings in which:

FIG. 1A illustrates a layout of a standard cell included in anintegrated circuit (IC) according to an example embodiment;

FIG. 1B is a cross-sectional view taken along a line L-L′ of FIG. 1A;

FIG. 2 is a circuit diagram of a standard cell included in an ICaccording to an example embodiment;

FIG. 3A illustrates a layout of an IC according to an exampleembodiment;

FIG. 3B is a cross-sectional view taken a line M-M′ of FIG. 3A;

FIG. 4 is a circuit diagram of a standard cell included in an ICaccording to an example embodiment;

FIG. 5A is a circuit diagram of a dummy area of a standard cell includedin an IC according to an example embodiment;

FIG. 5B is a table showing a voltage applied to a transistor formed in adummy area;

FIG. 6A illustrates a layout of a standard cell included in an ICaccording to an example embodiment;

FIG. 6B is a cross-sectional view taken along a line M-M′ of FIG. 6A;

FIG. 7 is a circuit diagram of a standard cell included in an ICaccording to an example embodiment;

FIG. 8 is a circuit diagram of a standard cell included in an ICaccording to an example embodiment;

FIG. 9A is a circuit diagram of a dummy area of a standard cell includedin an IC according to an example embodiment;

FIG. 9B is a table showing a voltage applied to a transistor formed in adummy area;

FIG. 10 is a flowchart of a method of fabricating an IC including aplurality of standard cells according to an example embodiment;

FIG. 11 is a block diagram of a System-on-Chip (SoC) according to anexample embodiment; and

FIG. 12 is a block diagram of a computing system including a memoryconfigured to store a program, according to an example embodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Reference will now be made in detail to example embodiments, withreference to the accompanying drawings. In the drawings, partsirrelevant to the description are omitted to clearly describe theexample embodiments, and like reference numerals refer to like elementsthroughout the specification. In this regard, the present exampleembodiments may have different forms and should not be construed asbeing limited to the descriptions set forth herein.

Throughout the specification, when it is described that a certainelement is “connected” to another element, it should be understood thatthe certain element may be “directly connected” to another element or“electrically connected” to another element via another element in themiddle. In addition, when a component “includes” an element, unlessthere is another opposite description thereto, it should be understoodthat the component does not exclude another element but may furtherinclude another element.

As used herein, the term “and/or” includes any and all combinations ofone or more of the associated listed items. Expressions such as “atleast one of,” when preceding a list of elements, modify the entire listof elements and do not modify the individual elements of the list.

Hereinafter, the present disclosure is described in detail withreference to the accompanying drawings.

FIG. 1A illustrates a layout of a standard cell 100 included in anintegrated circuit (IC) according to an example embodiment, and FIG. 1Bis a cross-sectional view taken along a line L-L′ of FIG. 1A.

Referring to FIG. 1A, the standard cell 100 may include a cell area CA,a first boundary area DBA1 and a second boundary area DBA2 located atinterface surfaces of the standard cell 100, and a first dummy area DA1and a second dummy area DA2 respectively located adjacent to two sidesof the cell area CA in a first direction X. The standard cell 100 mayfurther include a first active area 112 and a second active area 114.

The cell area CA may include at least one transistor that may determinefunctions of the standard cell 100. For example, when a NOR logic gateor a NAND logic gate is formed in the cell area CA, the cell area CA mayinclude two n-type transistors (e.g., n-type field-effect transistors(N-FETs)) and two p-type transistors (e.g., p-type field-effecttransistors (P-FETs)). Characteristics of the standard cell 100 maydepend on a number and kind of the transistors included in the cell areaCA and a connection relationship between the transistors.

The first boundary area DBA1 and the second boundary area DBA2 may beprovided at the interface surfaces of the standard cell 100 and serve asa basis for delineating the standard cell 100 from other adjacentstandard cells. A double diffusion break may be formed in each of thefirst boundary area DBA1 and the second boundary area DBA2. The firstactive area 112 and the second active area 114 may be cut by the firstboundary area DBA1 and the second boundary area DBA2. The first boundaryarea DBA1 and the second boundary area DBA2 will be described belowlater with reference to FIGS. 3A and 3B.

The first dummy area DA1 may be located between the first boundary areaDBA1 and the cell area CA, and the second dummy area DA2 may be locatedbetween the second boundary area DBA2 and the cell area CA. Due to thearrangement of the first dummy area DA1 and the second dummy area DA2, adistance from each of the first boundary area DBA1 and the secondboundary area DBA2 to the cell area CA may increase. Accordingly, an LLEon the cell area CA may be changed due to the first boundary area DBA1and the second boundary area DBA2, and performance of the standard cell100 may be improved. Also, an operation of generating interconnectionsbetween transistors included in the cell area CA may be facilitated dueto a space ensured by the first dummy area DA1 and the second dummy areaDA2 in the standard cell 100.

The first active area 112 and the second active area 114 may extend inthe first direction X and be located parallel to each other in a seconddirection Y perpendicular to the first direction X. The first activearea 112 may have a different conductivity from that of the secondactive area 114. For example, a p-type transistor may be formed in thefirst active area 112, and an n-type transistor may be formed in thesecond active area 114.

The standard cell 100 may further include a first power rail PR1 and asecond power rail PR2, which may supply power to the standard cell 100and extend in the first direction X. The first power rail PR1 may be apower supply voltage (VDD) rail, while the second power rail PR2 may bea ground voltage (VSS) rail. The first power rail PR1 may beelectrically connected to a first metal line 102, which may extend inthe second direction Y from the first power rail PR1.

The standard cell 100 may further include a plurality of gate lines G1to G6, a plurality of metal lines metal lines M1, a first contact C1,and a second contact C2. The plurality of metal lines M1 may be locatedin a different layer from the first active area 112 and the secondactive area 114. Also, the plurality of metal lines M1 may be located ina different layer from the plurality of gate lines G1 to G6.

The first contact C1 may electrically connect the first active area 112or the second active area 114 with the plurality of metal lines M1, andthe second contact C2 may electrically connect the plurality of gatelines G1 to G6 with the plurality of metal lines M1. Each of the firstcontact C1 and the second contact C2 may be electrically connected tothe plurality of metal lines M1 through a via V0.

Referring to FIGS. 1A and 1B, the standard cell 100 may further includea plurality of layers including a metal layer in which the first metalline 102 and the plurality of metal lines M1 are formed. The gate lineG5 included in the second dummy area DA2 may be electrically connectedto the first power rail PR1 through the first metal line 102. FIG. 1Billustrates a case in which the first power rail PR1 includes only ametal line included in the same layer as the first metal line 102, butthe present disclosure is not limited thereto. The first power rail PR1may include a plurality of metal lines included in different layers.

The gate line G5 may receive power from the first power rail PR1 throughthe first metal line 102, the second contact C2, and the via V0 withoutpassing through the first active area 112.

The first active area 112 may include a plurality of pins. Although FIG.1B illustrates a case in which the first active area 112 includes threepins, the present disclosure is not limited thereto.

FIG. 2 is a circuit diagram of the standard cell 100 included in an ICaccording to an example embodiment. FIG. 2 is a circuit diagramcorresponding to the standard cell 100 of FIG. 1A.

Referring to FIGS. 1A and 2, the standard cell 100 may further include afirst input pin I1 to which a first input signal A is applied, a secondinput pin 12 to which a second input signal B is applied, and an outputpin O from which an output signal S is output. The cell area CA mayinclude a plurality of transistors, for example, transistors MP1, MP2,MN1, and MN2 having gates to which a first input signal A and a secondinput signal B are applied. The p-type transistors MP1 and MP2 may beconnected to each other in series, and the transistors MP1, MP2, MN1,and MN2 included in the cell area CA may constitute a NOR logic gate.The transistors MP1, MP2, MN1, and MN2 may output the output signal S.

The first dummy area DA1 and the second dummy area DA2 may be locatedadjacent to the cell area CA, and a voltage applied to the first dummyarea DA1 and the second dummy area DA2 may vary according to a voltageapplied to the transistors MP1, MP2, MN1, and MN2 included in the cellarea CA. A plurality of dummy transistors, for example, dummytransistors DMP1, DMP2, DMN1, and DMN2, may be formed in the first dummyarea DA1 and the second dummy area DA2.

In an example embodiment, the gate line G2 included in the first dummyarea DA1 may be electrically floated. The first active area 112 formedin the first dummy area DA1 may be electrically connected to the firstpower rail PR1 so that a voltage (e.g., a power supply voltage VDD)having a first level may be applied to the first active area 112 formedin the first dummy area DA1. The second active area 114 formed in thefirst dummy area DA1 may be electrically connected to the second powerrail PR2 so that a voltage (e.g., a ground voltage VDD) having a secondlevel lower than the first level may be applied to the second activearea 114 formed in the first dummy area DA1. However, the presentdisclosure is not limited thereto, and a voltage having a first levelVDD or a second level VSS may be applied to the gate line G2 included inthe first dummy area DA1. A voltage applied to the first dummy area DA1will be described below later with reference to FIGS. 5A and 5B.

In an example embodiment, the gate line G5 included in the second dummyarea DA2 may be electrically connected to the first power rail PR1 sothat a voltage having the first level VDD may be applied to the gateline G5. The first active area 112 formed in the second dummy area DA2may be electrically floated, and the second active area 114 formed inthe second dummy area DA2 may be electrically connected to the secondpower rail PR2 so that a voltage having a second level VSS may beapplied to the second active area 114 formed in the second dummy areaDA2.

FIG. 3A illustrates a layout of an IC according to an exampleembodiment. FIG. 3B is a cross-sectional view taken along a line N-N′ ofFIG. 3A. FIGS. 3A and 3B are diagrams of the first and second boundaryareas DBA1 and DBA2 shown in FIG. 1A.

Referring to FIGS. 3A and 3B, each of the first and second boundaryareas DBA1 and DBA2 of FIG. 1A may be a double diffusion break DDB or asingle diffusion break SDB. The gate line DG formed in the doublediffusion break DDB or the single diffusion break SDB may be a dummygate line. Standard cells may be electrically isolated from one anotherby using a diffusion break and a dummy gate line.

In an example embodiment, a cutting layer may be located between thestandard cells to electrically isolate the standard cells from oneanother. That is, a layout of an IC including a plurality of standardcells may include the cutting layer between the standard cells. Here,the cutting layer may include an insulating material to cut active areasACT between the standard cells. In the IC fabricated along the layoutincluding the cutting layer, active areas ACT included in adjacentstandard cells may be separated from one another, so that the adjacentstandard cells may be electrically isolated from one another. Thecutting layer may be a double diffusion break DDB or a single diffusionbreak SDB.

As shown in FIG. 3A, the double diffusion break DDB may refer to acutting layer interposed between two adjacent dummy lines (e.g., dummygates DG). In an example embodiment, a device isolation film includingan insulating material may be formed in an IC fabricated along a layoutincluding the double diffusion break DDB. For example, the deviceisolation film may include an oxide.

The single diffusion break SDB may refer to a cutting layer aligned toone dummy line (e.g., a dummy gate DG). In an embodiment, a deviceisolation film including an insulating material may be formed in an ICfabricated along a layout including the single diffusion break SDB. Forexample, the device isolation film may include a nitride.

As described above, the device isolation film formed by the doublediffusion break DDB may include a different material from a materialincluded in the device isolation film formed by the single diffusionbreak SDB. Thus, the influence of the double diffusion break DDB on atransistor included in the standard cell may be different from theinfluence of the single diffusion break SDB on a transistor included inthe standard cell. For example, the double diffusion break DDB maydegrade performance of a p-type transistor included in the standardcell, while the single diffusion break SDB may degrade performance of ann-type transistor included in the standard cell.

Referring back to FIG. 1A, in the standard cell 100, when a plurality ofp-type transistors included in the cell area CA are connected in seriesand each of the first boundary area DBA1 and the second boundary areaDBA2 is the double diffusion break DDB, the first dummy area DA1 and thesecond dummy area DA2 may be located between the cell area CA and thefirst boundary area DBA1 and between the cell area CA and the secondboundary area DBA2, respectively. Thus, degradation of performance ofthe standard cell 100 due to the double diffusion break DDB may beprevented.

In another example embodiment, when a plurality of n-type transistorsincluded in the cell area CA are connected in series and each of thefirst boundary area DBA1 and the second boundary area DBA2 is the singlediffusion break SDB, a first dummy area and a second dummy area may belocated so that degradation of performance of the standard cell due tothe single diffusion break SDB may be prevented.

FIG. 4 is a circuit diagram of a standard cell 100 a included in an ICaccording to an example embodiment. In FIG. 4, the same referencenumerals are used to denote the same elements as in FIG. 2. A detaileddescription of the same elements as in FIG. 2 will be omitted forbrevity.

Referring to FIG. 4, the standard cell 100 a may include a cell areaCA_a, a first dummy area DA1, and a third dummy area DA3. The cell areaCA_a may include a plurality of transistors, for example, transistorsMP1, MP2, MN1, and MN2 having gates to which a first input signal A anda second input signal B are applied. The n-type transistors MN1 and MN2may be connected to each other in series, and the transistors MP1, MP2,MN1, and MN2 included in the cell area CA_a may constitute a NAND logicgate. The transistors MP1, MP2, MN1, and MN2 may output an output signalS based on the first input signal A and the second input signal B.

In an example embodiment, a plurality of dummy transistors, for example,dummy transistors DMP2 and DMN2, may be formed in the third dummy areaDA3. Gates of the dummy transistors DMP2 and DMN2 may be electricallyconnected to a second power rail PR2 so that a voltage having a secondlevel VSS may be applied to the gates of the dummy transistors DMP2 andDMN2. The third dummy area DA3 may include a metal line that extendsfrom the second power rail PR2 in a direction perpendicular to adirection in which the second power rail PR2 extends. The gates of thedummy transistors DMP2 and DMN2 may be electrically connected to thesecond power rail PR2 through the metal line.

A first active area (e.g., a region in which the dummy transistor DMP2is formed) formed in the third dummy area DA3 may be electricallyconnected to the first power rail PR1 so that a voltage having a firstlevel VDD may be applied to the first active area.

A second active area (e.g., a region in which the dummy transistor DMN2is formed) formed in the third dummy area DA3 may be electricallyfloated. Since the voltage having the second VSS is applied to the gateof the dummy transistor DMN2, the second active area may be electricallyfloated. However, the present disclosure is not limited thereto, and avoltage applied to the third dummy area DA3 will be described belowlater with reference to FIGS. 5A and 5B.

FIG. 5A is a circuit diagram of a dummy area of a standard cell includedin an IC according to an example embodiment. FIG. 5B is a table showinga voltage applied to a transistor formed in the dummy area.

Referring to FIGS. 5A and 5B, a standard cell included in an ICaccording to the example embodiment may include at least one of first tothird dummy areas DA1, DA2, and DA3. For example, one of the first tothird dummy areas DA1, DA2, and DA3 may be included in the standard cellin response to a voltage applied to an active area that is adjacent tothe dummy area in a cell area. Gate lines included in the first to thirddummy areas DA1, DA2, and DA3 may be electrically connected to a firstpower rail PR1 or a second power rail PR2 through a metal line (e.g.,the first metal line 102 of FIG. 1A), which may extend from the firstpower rail PR1 or the second power rail PR2, so that a voltage may beapplied to the gate lines.

The first dummy area DA1 may be located when, from among a region of thecell area adjacent to the dummy area, a voltage having a first level VDDis applied to an active area (e.g., the first active area 112 of FIG.1A) in which a p-type transistor is formed and a voltage having a secondlevel VSS is applied to an active area (e.g., the second active area 114of FIG. 1A) in which an n-type transistor is formed. In this case, thevoltage having the first level VDD may be applied to the active area ofthe first dummy area DA1 in which the p-type transistor is formed, whilethe voltage having the second level VSS may be applied to the activearea of the first dummy area DA1 in which the n-type transistor isformed. The voltage having the first level VDD or the second level VSSmay be applied to the gate line included in the first dummy area DA1.Alternatively, as shown in FIG. 5A, the gate line included in the firstdummy area DA1 may be floated. Even if a voltage is not applied to thegate line included in the first dummy area DA1, since the same voltageis applied to a source region and a drain region of the transistor, anoutput signal of the cell area may not be affected.

The second dummy area DA2 may be located when, from among the region ofthe cell area adjacent to the dummy area, an output signal is outputfrom the active region in which the p-type transistor is formed and avoltage having the second level VSS is applied to the active area inwhich the n-type transistor is formed. In this case, a voltage havingthe first level VDD may be applied to the gate line included in thesecond dummy area DA2. Thus, the output signal of the cell area may beprevented from being affected by the gate line included in the seconddummy area DA2 and the transistor formed by the active area.

A voltage having the first level VDD may be applied to or an output pinof the cell area may be connected to the active area of the second dummyarea DA2 in which the p-type transistor is formed. Alternatively, asshown in FIG. 5A, the active area of the second dummy area DA2 in whichthe p-type transistor is formed may be floated. A voltage having thesecond level VSS may be applied to the active area of the second dummyarea DA2 in which the n-type transistor is formed.

The third dummy area DA3 may be located when, from among the region ofthe cell area adjacent to the dummy area, a voltage having the firstlevel VDD is applied to the active area in which the p-type transistoris formed and an output signal is output from the active area in whichthe n-type transistor is formed. In this case, the voltage having thesecond level VSS may be applied to the gate line included in the gateline included in the third dummy area DA3. Thus, the output signal ofthe cell area may be prevented from being affected by the gate lineincluded in the third dummy area DA3 and the transistor formed by theactive area.

The voltage having the first level VDD may be applied to the active areaof the third dummy area DA3 in which the p-type transistor is formed.The voltage having the second level VSS may be applied to or the outputpin of the cell area may be connected to the active area of the thirddummy area DA3 in which the n-type transistor is formed. Alternatively,as shown in FIG. 5A, the active area of the third dummy area DA3 inwhich the n-type transistor is formed may be floated.

FIG. 6A illustrates a layout of a standard cell 100 b included in an ICaccording to an example embodiment. FIG. 6B is a cross-sectional viewtaken along a line M-M′ of FIG. 6A. In FIG. 6A, the same referencenumerals are used to denote the same elements as in FIG. 1A, anddetailed descriptions of the same elements as in FIG. 1A will be omittedfor brevity.

Referring to FIG. 6A, the standard cell 100 b may include a cell areaCA_b, a first boundary area DBA1 and a second boundary area DBA2 formedat interface surfaces of the standard cell 100 b, and a first dummy areaDA1_b and a second dummy area DA2_b, which are respectively adjacent totwo sides of the cell area CA_b. Also, the standard cell 100 b mayinclude a first active area 112 and a second active area 114.

The first dummy area DA1_b may be located between the first boundaryarea DBA1 and the cell area CA_b, and the second dummy area DA2_b may belocated between the second boundary area DBA2 and the cell area CA_b.Due to the arrangement of the first dummy area DA1_b and the seconddummy area DA2_b, a distance from each of the first boundary area DBA1and the second boundary area DBA 2 to the cell area CA_b may increase.Accordingly, an LLE caused by the first boundary area DBA1 and thesecond boundary area DBA2 to the cell area CA_b may be changed, andperformance of the standard cell 100 b may be improved. Also, by formingthe first dummy area DA1_b and the second dummy area DA2_b in thestandard cell 100 b, a space may be ensured to facilitate an operationof generating interconnections between transistors included in the cellarea CA_b.

Referring to FIGS. 6A and 6B, the standard cell 100 b may include aplurality of layers. A gate line G5 included in the second dummy areaDA2_b may be electrically connected to a first power rail PR1 through afirst contact C1 that is in contact with the first active area 112. Whencomparing with FIGS. 1A and 1B, since the gate line G5 included in thesecond dummy area DA2_b is electrically connected to the first activearea 112, the gate line G5 may have the same electric potential as thefirst active area 112. In contrast, in FIGS. 1A and 1B, since the gateline G5 and the first active area 112 are electrically isolated fromeach other, the gate line G5 may or may not have the same electricpotential as the first active area 112.

Although FIG. 6B illustrates a case in which the first power rail PR1includes only a metal line formed in the same layer as a metal line M1,the present disclosure is not limited thereto. The first power rail PR1may include a metal line formed in a different layer from the metal lineM1 or a plurality of metal lines formed in different layers.

FIG. 7 is a circuit diagram of a standard cell included in an ICaccording to an example embodiment. FIG. 7 is a circuit diagramcorresponding to the standard cell 100 b shown in FIG. 6A. In FIG. 7,the same reference numerals are used to denote the same elements as inFIG. 2, and detailed descriptions of the same elements as in FIG. 2 willbe omitted for brevity.

Referring to FIGS. 6A and 7, a first dummy area DA1_b and a second dummyarea DA2_b may be located adjacent to a cell area CA_b, and a voltageapplied to the first dummy area DA1_b and the second dummy area DA2_bmay vary according to a voltage applied to a plurality of transistors,for example, transistors MP1, MP2, MN1, and MN2, which are included inthe cell area CA_b. A plurality of dummy transistors, for example, dummytransistors DMP1, DMP2, DMN1, and DMN2, may be formed in the first dummyarea DA1_b and the second dummy area DA2_b.

In an example embodiment, a first active area 112 formed in the firstdummy area DA1_b may be electrically connected to a first power rail PR1so that a voltage having a first level VDD may be applied to the firstactive area 112. A second active area 114 formed in the first dummy areaDA1_b may be electrically connected to a second power rail PR2 so that avoltage having a second level VSS may be applied to the second activearea 114. Since the same voltage is applied to a source region and adrain region of each of the dummy transistors DMP1 and DMN1, a gate lineG2 included in the first dummy area DA1_b may be electrically floated.However, the present disclosure is not limited thereto, and the voltagehaving the first level VDD or the second level VSS may be applied to thegate line G2 included in the first dummy area DA1_b. A voltage appliedto the first dummy area DA1_b will be described below later withreference to FIGS. 9A and 9B.

In an example embodiment, a gate line G5 included in the second dummyarea DA2_b may be electrically connected to the first power rail PR1 sothat a voltage having the first level VDD may be applied to the gateline G5. In this case, since the gate line G5 is electrically connectedto the first active area 112 formed in the second dummy area DA2_b, avoltage having the first level VDD may also be applied to the firstactive area 112. The second active area 114 formed in the second dummyarea DA2_b may be electrically connected to the second power rail PR2 sothat a voltage having the second level VSS may be applied to the secondactive area 114.

FIG. 8 is a circuit diagram of a standard cell included in an ICaccording to an example embodiment. In FIG. 8, the same referencenumerals are used to denote the same elements as in FIG. 7. A detaileddescription of the same elements as in FIG. 7 will be omitted forbrevity.

Referring to FIG. 8, a standard cell 100 c may include a cell area CA_c,a first dummy area DA1_b, and a third dummy area DA3_c. The cell areaCA_c may include a plurality of transistors, for example, p-typetransistors MP1 and MP2 and n-type transistors MN1 and MN2, which havegates to which a first input signal A and a second input signal B areapplied. The n-type transistors MN1 and MN2 may be connected in series,and the transistors MP1, MP2, MN1, and MN2 included in the cell areaCA_c may constitute a NAND logic gate. The transistors MP1, MP2, MN1,and MN2 may output an output signal S based on the first input signal Aand the second input signal B.

In an example embodiment, a plurality of dummy transistors, for example,dummy transistors DMP2 and DMN2, may be formed in a third dummy areaDA3_c. Gates of the dummy transistors DMP2 and DMN2 may be electricallyconnected to a second active area (e.g., a region in which thetransistor DMN2 is formed) formed in the third dummy area DA3_c so thatthe gates of the dummy transistors DMP2 and DMN2 may have the sameelectric potential as the second active area. The gates of the dummytransistors DMP2 and DMN2 may be electrically connected to a secondpower rail PR2 through a contact that is in contact with the secondactive area, so that a voltage having the second level VSS may beapplied to the gates of the dummy transistors DMP2 and DMN2.

A first active area (e.g., a region in which the transistor DMP2 isformed) formed in the third dummy area DA3_c may be electricallyconnected to a first power rail PR1 so that a voltage having a firstlevel VDD may be applied to the first active area.

FIG. 9A is a circuit diagram of a dummy area of a standard cell includedin an IC according to an example embodiment. FIG. 9B is a table showinga voltage applied to a transistor formed in the dummy area.

Referring to FIGS. 9A and 9B, the IC according to the embodiment mayinclude at least one of first to third dummy areas DA1_b, DA2_b, andDA3_c. In a cell area, one of first to third dummy areas DA1_b, DA2_b,and DA3_c may be located in the dummy area in response to a voltageapplied to an active area adjacent to the dummy area.

Gate lines included in the first to third dummy areas DA1_b, DA2_b, andDA3_c may be electrically connected to the active area. For example,when a voltage is applied to the gate lines included in the first tothird dummy areas DA1_b, DA2_b, and DA3_c, the gate lines may beelectrically connected to a first power rail PR1 or a second power railPR2 through a contact that is in contact with the active area.

The first dummy area DA1_b may be located when, from among a region ofthe cell area adjacent to the dummy area, a voltage having a first levelVDD is applied to an active area (e.g., the first active area 112 ofFIG. 6A) in which a p-type transistor is formed and a voltage having asecond level VSS is applied to an active area (e.g., the second activearea 114 of FIG. 6A) in which an n-type transistor is formed. In thiscase, the voltage having the first level VDD may be applied to theactive area of the first dummy area DA1_b in which the p-type transistoris formed, and the voltage having the second level VSS may be applied tothe active area of the first dummy area DA1_b in which the n-typetransistor is formed. A voltage having the first level VDD or the secondlevel VSS may be applied to the gate line included in the first dummyarea DA1_b. Alternatively, as shown in FIG. 9A, the gate line includedin the first dummy area DA1_b may be floated. Even if a voltage is notapplied to the gate line included in the first dummy area DA1_b, anoutput signal of the cell area may not be affected.

The second dummy area DA2_b may be located when, from among the regionof the cell area adjacent to the dummy area, an output signal is outputfrom the active area in which the p-type transistor is formed and thevoltage having the second level VSS is applied to the active area inwhich the n-type transistor is formed. In this case, the voltage havingthe first level VDD may be applied to the gate line included in thesecond dummy area DA2_b. Thus, the output signal of the cell area may beprevented from being affected by the gate line included in the seconddummy area DA2_b and the transistor formed by the active area.

The voltage having the first level VDD may be applied to the active areaof the second dummy area DA2_b in which the p-type transistor is formed,while the voltage having the second level VSS may be applied to theactive area of the second dummy area DA2_b in which the n-typetransistor is formed.

The third dummy area DA3_c may be located when, from among the region ofthe cell area adjacent to the dummy area, a voltage having the firstlevel VDD is applied to the active area in which the p-type transistoris formed and an output signal is output from the active area in whichthe n-type transistor is formed. In this case, a voltage having thesecond level VSS may be applied to the gate line included in the thirddummy area DA3_c. Thus, the output signal of the cell area may beprevented from being affected by the gate line included in the thirddummy area DA3_c and the transistor formed by the active area. Thevoltage having the first level VDD may be applied to the active area ofthe third dummy area DA3_c in which the p-type transistor is formed,while the voltage having the second level VSS may be applied to theactive area of the third dummy area DA3_c in which the n-type transistoris formed.

FIG. 10 is a flowchart of a method of fabricating an IC including aplurality of standard cells according to an example embodiment.

A standard cell library D50 may include information about the pluralityof standard cells, for example, function information, characteristicinformation, and layout information. As shown in FIG. 10, the standardcell library D50 may include information D51 about the ordinary standardcell and information D53 about the enhanced standard cell. The enhancedstandard cell may include at least one of the standard cells 100, 100 a,100 b, and 100 c having the dummy areas, which are shown in FIGS. 1A, 2,4, 6A, 7, and 8. When the enhanced standard cell includes a dummy areaas described above, a distance from a boundary area to a cell area mayincrease so that an LLE caused by the boundary area may be reduced.

In operation S100, a logical synthesis operation of generating netlistdata D20 based on register-transfer level (RTL) data D10 may begenerated. For example, a semiconductor design tool (e.g., a logicalsynthesis tool) may perform a logical synthesis operation with referenceto the standard cell library D50 from RTL data D10, which is describedas a hardware description language (HDL), such as a very-high-speedintegrated circuits (VHSIC) hardware description language (VHDL) andVerilog, and generate netlist data D20 including a bitstream or anetlist.

In operation S200, a place & route (P&R) operation of generating layoutdata D30 from the netlist data D20 may be performed. The P&R operationS200 may include a plurality of operations, for example, operationsS210, S220, and S230.

In operation S210, an operation of selectively arranging an ordinarystandard cell and an enhanced standard cell may be performed. When astandard cell with improved performance is required, the enhancedstandard cell may be arranged. For example, the enhanced standard cellmay be located in a timing critical path. A semiconductor design tool(e.g., a P&R tool) may arrange a plurality of standard cells includingthe enhanced standard cell D50 with reference to the standard celllibrary D50 based on the netlist data D20.

In operation S220, an operation of generating interconnections may beperformed. The interconnections may be electrically connected to outputpins and input pins of the standard cells and include at least one viaand at least one conductive pattern. The standard cells may be routed bygenerating the interconnections.

In operation S230, an operation of generating the layout data D30 may beperformed. The layout data D30 may have a format (e.g., GDSII), andinclude geometric information about the standard cells and theinterconnections.

In operation S300, an operation of manufacturing a mask may beperformed. For example, patterns formed in a plurality of layers may bedefined based on the layout data D30, and at least one mask (or aphotomask) may be manufactured to form patterns of each of a pluralityof layers.

In operation S400, an operation of fabricating an IC may be performed.For example, a plurality of layers may be patterned by using at leastone mask manufactured in operation S300 to fabricate an IC. OperationS400 may include operations S410 and S420.

In operation S410, a front-end-of-line (FEOL) process may be performed.The FEOL process may refer to a process of forming individual devices,for example, a transistor, a capacitor, and a resistor, on a substrateduring an IC fabricating process. For example, the FEOL process mayinclude an operation of planarizing and cleaning a wafer, an operationof forming a trench, an operation of forming a well, an operation offorming a gate line, and an operation of forming a source and a drain.

In operation S420, a back-end-of-line (BEOL) process may be performed.The BEOL process may refer to a process of interconnecting individualdevices, for example, a transistor, a capacitor, and a resistor, duringan IC fabrication process. For example, the BEOL process may include anoperation of siliciding a gate and source and drain regions, anoperation of adding a dielectric material, a planarization operation, anoperation of forming a hole, an operation of adding a metal layer, anoperation of forming a via, and an operation of forming a passivationlayer. Next, the IC may be packaged in a semiconductor package and usedas a component for various applications.

Due to the BEOL process S420, a conductive pattern according to anembodiment may be formed, and a via may be formed to be electricallyconnected to the conductive pattern. For example, the layout data D30may include geometric information about an output pin of a standardcell, which is defined by the standard cell library D50, and the outputpin may be formed via the BEOL process using a mask manufactured basedon the layout data D30. Also, the layout data D30 may include geometricinformation about a via located in a restricted region of the output pinof the standard cell, based on the information D51 about the ordinarystandard cell and information D521 about the enhanced standard cell,which is included in the standard cell library D50, and the via may beformed via the BEOL process using the mask manufactured based on thelayout data D30.

FIG. 11 is a block diagram of a System-on-Chip (SoC) 1000 according toan example embodiment. The SoC 1000, which is a semiconductor device,may include an IC. Accordingly, the SoC 1000 may include at least one ofthe standard cells 100, 100 a, 100 b, and 100 c including the dummyareas, which are shown in FIGS. 1A, 2, 4, 6A, 7, and 8.

The SoC 1000 may be embodied by integrating complicated function blocks(e.g., an intellectual property (IP) block) configured to serve variousfunctions in a single chip. The standard cells according to the exampleembodiment may be included in the respective function blocks of the SoC1000. Thus, electromigration may be prevented and/or alleviated, and theSoC 1000 with a reduced area and high functional reliability may beobtained.

Referring to FIG. 11, the SoC 1000 may include a modem 1200, a displaycontroller 1300, a memory 1400, an external memory controller 1500, acentral processing unit (CPU) 1600, a transaction unit 1700, a powermanagement IC (PMIC) 1800, and a graphics processing unit (GPU) 1900.Respective function blocks of the SoC 1000 may communicate with oneanother via a system bus 1100.

The CPU 1600 capable of generally controlling an operation of the SoC1000 may control operations of other function blocks including, forexample, the modem 1200, the display controller 1300, the memory 1400,the external memory controller 1500, the CPU 1600, the transaction unit1700, the PMIC 1800, and the GPU 1900. The modem 1200 may demodulate asignal received from the outside of the SoC 1000 or modulate a signalgenerated from the inside of the SoC 1000 and externally transmit thedemodulated signal or the modulated signal. The external memorycontroller 1500 may control an operation of transmitting and receivingdata to and from an external memory device connected to the SoC 1000.For example, a program and/or data stored in the external memory devicemay be provided to the CPU 1600 or the GPU 1900 under the control of theexternal memory controller 1500. The GPU 1900 may execute programinstructions related to graphic processing. The GPU 1900 may receivegraphic data through the external memory controller 1500 or transmitgraphic data processed by the GPU 1900 through the external memorycontroller 1500 to the outside of the SoC 1000. The transaction unit1700 may monitor data transaction of each of the function blocks, andthe PMIC 1800 may control power supplied to each of the function blocksunder the control of the transaction unit 1700. The display controller1300 may control a display (or a display device) located outside the SoC1000 and transmit data, which is generated in the SoC 1000, to thedisplay.

The memory 1400 may include a non-volatile memory, such as electricallyerasable programmable read-only memory (EEPROM), flash memory,phase-change random access memory (PRAM), resistive RAM (RRAM),nano-floating gate memory (NFGM), polymer RAM (PoRAM), magnetic RAM(MRAM), and ferroelectric RAM (FRAM). Alternatively, the memory 1400 mayinclude a volatile memory, such as dynamic RAM (DRAM), static RAM(SRAM), mobile DRAM, double-data-rate synchronous DRAM (DDR SDRAM),low-power DDR (LPDDR) SDRAM, graphic DDR (GDDR) SDRAM, and Rambus DRAM(RDRAM).

FIG. 12 is a block diagram of a computing system 10 including a memoryconfigured to store a program, according to an example embodiment. Atleast some of operations included in a method (e.g., the method shown inFIG. 10) of fabricating an IC according to an example embodiment may beperformed in the computing system 10.

The computing system 10 may be a fixed computing system (e.g., a desktopcomputer, a workstation, and a server) or a portable computing system(e.g., a laptop computer). As shown in FIG. 12, the computing system 10may include a processor 11, input/output (I/O) devices 12, a networkinterface 13, RAM 14, ROM 15, and a storage device 16. The processor 11,the I/O devices 12, the network interface 13, the RAM 14, the ROM 15,and the storage device 16 may be connected to a bus 17 and communicatewith one another via the bus 17.

The processor 11 may be referred to as a processing unit and include,for example, at least one core (e.g., a microprocessor (MP), anapplication processor (AP), a digital signal processor (DSP), and agraphics processing unit (GPU)), which may execute an arbitrary commandset (e.g., Intel Architecture-32 (IA-32), 64-bit expansion IA-32,x86-64, PowerPC, Sparc, microprocessor without interlocked pipelinestages (MIPS), advanced RISC machines (ARM), and IA-64). For example,the processor 11 may access a memory (i.e., the RAM 14 or the ROM 15)via the bus 17 and execute commands stored in the RAM 14 or the ROM 15.As shown in FIG. 1, the RAM 14 may store a program 2000 according to anembodiment or at least a portion thereof, and the program 2000 mayenable the processor 11 to perform at least some of operations includedin a method of fabricating an IC. That is, the program 2000 may includea plurality of commands that may be executed by the processor 11, andthe plurality of commands included in the program 2000 may enable theprocessor 11 to perform, for example, a logical synthesis operation(refer to S100 in FIG. 10) and/or a place and route (P&R) operation(refer to S200 in FIG. 10).

The storage device 16 may not lose stored data even if power supplied tothe computing system 10 is interrupted. For example, the storage device16 may include a non-volatile memory device or a storage medium, such asa magnetic tape, an optical disc, and a magnetic disc. Also, the storagedevice 16 may be attachable to and detachable from the computing system10. The storage device 16 may store the program 2000 according to theexample embodiment. Before the program 2000 is executed by the processor11, the program 2000 or at least part of the program 2000 may be loadedfrom the storage device 16 into the RAM 14. In another case, the storagedevice 16 may store a file described in a program language, and theprogram 2000, which is generated by a compiler based on the file, or atleast part of the program 2000 may be loaded into the RAM 14. Also, asshown in FIG. 12, the storage device 16 may store a database 251, andthe database 251 may include information (e.g., the standard celllibrary D50 of FIG. 10) required to design an IC.

The storage device 16 may store data to be processed by the processor 11or data processed by the processor 11. That is, based on the program2000, the processor 11 may generate data by processing data stored inthe storage device 16 and store the generated data in the storage device16. For instance, the storage device 16 may store RTL data D10, netlistdata D200, and/or layout data D30.

The I/O devices 12 may include an input device, such as a keyboard and apointing device, and an output device, such as a display device and aprinter. For example, by using the I/O devices 12, a user may triggerexecution of the program 2000 due to the processor 11, input the RTLdata D10 and/or the netlist data D200 of FIG. 10, or confirm the layoutdata D30 of FIG. 10.

The network interface 13 may provide access to a network outside thecomputing system 10. For example, the network may include a plurality ofcomputing systems and a plurality of communication links. Thecommunication links may include wired links, optical links, wirelesslinks, or links of arbitrary different types.

While the present disclosure has been particularly shown and describedwith reference to embodiments thereof, it will be understood thatvarious changes in form and details may be made therein withoutdeparting from the spirit and scope of the following claims.

What is claimed is:
 1. An integrated circuit comprising: a plurality of standard cells, wherein at least one standard cell of the plurality of standard cells comprises: a cell area comprising at least one transistor configured to determine a function of the at least one standard cell; a first dummy area and a second dummy area respectively adjacent to two comprising sides of the cell area in a first direction; an active area extending in the first direction across the cell area, the first dummy area, and the second dummy area; and a first boundary area and a second boundary area that are adjacent to the first dummy area and the second dummy area, respectively, and disposed farther away from the cell area than the first dummy area and the second dummy area, respectively, wherein the active area comprises a first active area and a second active area, which are spaced apart from each other in a second direction perpendicular to the first direction and extend parallel to each other in the first direction, wherein at least one from among the first active area and the second active area provided in the first dummy area is biased, and wherein at least one from among the first active area and the second active area provided in the second dummy area is biased.
 2. The integrated circuit of claim 1, wherein a first voltage having a first level is applied to the first active area provided in the first dummy area, and a second voltage having a second level lower than the first level is applied to the second active area provided in the first dummy area.
 3. The integrated circuit of claim 2, wherein the first dummy area comprises a gate line to which at least one from among the first voltage having the first level and the second voltage having the second level is applied.
 4. The integrated circuit of claim 1, wherein the second dummy area comprises a gate line to which at least one from among a first voltage having a first level and a second voltage having a second level lower than the first level is applied.
 5. The integrated circuit of claim 4, wherein the first active area provided in the second dummy area is electrically connected to an output pin of the at least one standard cell, and the second voltage having the second level is applied to the second active area provided in the second dummy area.
 6. The integrated circuit of claim 4, wherein the first voltage having the first level is applied to the first active area provided in the second dummy area, and the second active area provided in the second dummy area is electrically connected to an output pin of the at least one standard cell.
 7. The integrated circuit of claim 4, wherein at least one from among the first active area and the second active area provided in the second dummy area has a same electric potential as the gate line of the second dummy area.
 8. The integrated circuit of claim 1, wherein the active area is separated from the first boundary area and the second boundary area.
 9. The integrated circuit of claim 1, wherein a first voltage applied to the first active area and the second active area provided in the first dummy area and the second dummy area, respectively, varies according to a second voltage applied to regions of the first active area and the second active area of the cell area, the regions being adjacent to the first dummy area and the second dummy area, respectively.
 10. The integrated circuit of claim 1, wherein one area from among the first boundary area and the second boundary area comprises a double diffusion break, and another area from among the first boundary area and the second boundary area comprises a single diffusion break.
 11. An integrated circuit comprising: a plurality of standard cells, wherein at least one standard cell of the plurality of standard cells comprises: a first power rail and a second power rail, each of the first power rail and the second power rail extending in a first direction to supply power to the at least one standard cell, the first power rail and the second power rail being spaced apart from each other in a second direction perpendicular to the first direction; a cell area including at least one transistor configured to determine a function of the at least one standard cell; a dummy area adjacent to two opposing sides of the cell area in the first direction; an active area extending in the first direction across the cell area and the dummy area; and a boundary area adjacent to the dummy area and disposed farther away from the cell area than the dummy area, wherein the active area comprises a first active area and a second active area, which are spaced apart from each other in the second direction and extend parallel to each other in the first direction, and wherein the first active area provided in the dummy area is electrically connected to the first power rail, and the second active area provided in the dummy area is electrically connected to the second power rail.
 12. The integrated circuit of claim 11, wherein the dummy area comprises a gate line electrically connected to one from among the first power rail and the second power rail.
 13. The integrated circuit of claim 11, wherein the active area is separated from the boundary area.
 14. The integrated circuit of claim 11, wherein the boundary area comprises one from among a double diffusion break and a single diffusion break. 